Unidentified major p-type source in SnSe: Multivacancies

Abstract Tin selenide (SnSe) is considered a robust candidate for thermoelectric applications due to its very high figure of merit, ZT, with values 2.6 in p-type and 2.8 n-type single crystals. Sn has been replaced various lower group dopants achieve successful doping SnSe ZT values. A known, facile, powerful alternative way introduce hole carrier use natural vacancy, V . Through transport scanning tunneling microscopy studies, we discovered that are dominant high-quality (slow cooling rate) crystals, while multiple vacancies, multi, low-quality (high Surprisingly, both multi help increase the power factors SnSe, whereas samples have superior properties Additionally, observation good sources observed relatively crystals useful because polycrystalline can be used mechanical strength; this substance usually fabricated at speeds.